bst2222全球最奢华游戏-NO.1

特聘副研究员，硕导

wei_shen_@whu.edu.cn

宽禁带半导体；半导体材料及器件仿真；金刚石量子色心

教育经历：

2017.09 至 2021.06, 武汉大学, 机械电子工程, 博士

2019.09 至 2020.09, 欧洲伊比利亚国际纳米技术实验室, 量子与能源材料部门, 联培博士

2013.09 至 2016.06, 武汉理工大学, 机械电子工程, 硕士

2009.09 至 2013.06, 武汉理工大学, 机械设计制造及其自动化, 学士

工作经历：

2021.10-至今，bst2288全球奢华游戏，副研究员

代表性论文：

[1]Zijun Qi#,Wei Shen#, Rui Li, Xiang Sun, Lijie Li, Qijun Wang, Kang Liang*, Gai Wu*. AlN/diamond interface nanoengineering for reducing thermal boundary resistance by molecular dynamics simulations. Applied Surface Science. 2023.

[2]Dekun Yang, Zhidan Lei, Lijie Li,Wei Shen, Hui Li*, Chengqun Gui*, Yi Song*. High optical storage density using three-dimensional hybrid nanostructures based on machine learning. Optics and Lasers in Engineering, 2023, 161: 107347.

[3]Chunhui Wang, Shuangshuang Zhao,Wei Shen, Xiaoming Xi, Lishan Yang*, Lixiong Bai, Yahui Yang*, Chenghuan Huang, Jian Zhu, Youyuan Zhou, Yitai Qian, Zhongliang Tian, Yanqing Lai, Liqiang Xu*. Preferential growth of HT-LiCo1-xAlxO2 cathode micro-bricks via an intermediate-facilitated solid-solid-gas reaction. Journal of Power Sources, 2022, 542: 231700.

[4]Wei Shen#, Gai Wu#, Lijie Li, Hui Li, Sheng Liu*, Shengnan Shen*, Diwei Zou. Fluorine-terminated diamond (110) surfaces for nitrogen-vacancy quantum sensors. Carbon, 2022, 193:17-25.

[5]Wei Shen, Shengnan Shen*, Sheng Liu*, Hui Li, Yang Zhang, Qiaoxuan Zhang, Yuzheng Guo. Epoxy oxidized diamond (111)-(2×1) surface for nitrogen-vacancy based quantum sensors. Carbon, 2021, 173: 485-492.

[6]Wei Shen#, Yuanhui Pan#, Shengnan Shen*, Hui Li*, Siyuan Nie, Jie Mei. Intrinsic two-dimensional multiferroicity in CrNCl2 monolayer. Chinese Physics B, 2021, 471: 309-317.

[7]Wei Shen, Shengnan Shen*, Sheng Liu*, Hui Li, Zhiyin Gan, Qiaoxuan Zhang. Monolayer cubic boron nitride terminated diamond (111) surfaces for quantum sensing and electron emission applications. ACS Applied Materials & Interfaces, 2020, 12(29): 33336-33345.

[8]Wei Shen, Yuanhui Pan, Shengnan Shen*, Hui Li*, Yang Zhang, Guohao Zhang. Electron affinity of boron-terminated diamond (001) surface: A density functional theory study. Journal of Materials Chemistry C, 2019, 7(31): 9756-9765.

[9]Wei Shen, Shengnan Shen*, Sheng Liu*, Hui Li*, Siyuan Nie, Yuanhui Pan, Zhiqiang Tian, Qifan Li. Binding of hydrogen to phosphorus dopant in phosphorus-doped diamond surfaces: A density functional theory study. Applied Surface Science, 2019, 471: 309-317.

[10]Siyuan Nie#,Wei Shen#, Shengnan Shen*, Hui Li*, Yuanhui Pan, Yuechang Sun, Yinghua Chen, Haiqin Qi. Effects of vacancy and hydrogen on the growth and morphology of n-type phosphorus-doped diamond surfaces, Applied Sciences-Basel, 2021, 11(4): 1896.

[11]Yuanhui Pan#,Wei Shen#, Shengnan Shen*, Hui Li*. A theoretical study of the energetic stability and geometry of silicon-vacancy color centers in diamond (001) surfaces. Applied Sciences-Basel, 2019, 9(24): 5471.

[12]Shengnan Shen,Wei Shen, Sheng Liu*, Hui Li*, Yinghua Chen, Haiqin Qi. First-principles calculations of co-doping impurities in diamond. Materials Today Communications, 2020, 23: 100847.

[13]Wei Shen, Dingfang Chen, Lijie Li, Menglun Tao. Modeling and simulation of vibration energy harvester with piezomagnetoelastic beam array. IEEE 19th International Conference on Computer Supported Cooperative Work in Design (CSCWD). IEEE, 2015: 303-307.

[14]Tan Shu, Hui Li*, Shengnan Shen,Wei Shen, Fuhao Cui. Dynamic performance of head–disk interface in HAMR using molecular dynamics simulation method. IEEE Transactions on Magnetics, 2018, 54(11): 1-5.

代表性专利：

[1]Sheng Liu,Wei Shen, Gai Wu, Yuzheng Guo, Kang Liang, Qijun Wang, Shizao Wang. Strained Diamond Growth Doping Method Based on CVD Method.授权号：US011519097B1,美国专利, 2022.

[2]刘胜，王诗兆，郭宇铮，沈威，吴改，孙亚萌，汪启军，东芳.金刚石薄膜转移装置及转移工艺和基于间接预拉伸金刚石薄膜应变装置及构建方法，专利授权号：ZL202210087749.9，中国，发明专利, 2022.

[3]刘胜，沈威，吴改，郭宇铮，梁康，汪启军，王诗兆.一种基于CVD法的应变金刚石生长掺杂方法，专利授权号：ZL202210003968.4，中国，发明专利, 2022.

[4]李辉，申胜男，熊佳豪，沈威.一种氮化硼表层覆盖的NV色心金刚石，其制备方法和应用，专利授权号：ZL202110581430.7，中国，发明专利, 2021.

[5]李辉，申胜男，张正浩，沈威.面向NV色心的氧覆盖金刚石表面结构及其制备方法，专利授权号：202110581418.6，中国，发明专利, 2021.

[6]李辉，刘胜，申胜男，邹迪玮，沈威. n型共掺杂金刚石半导体材料制备的多尺度耦合仿真方法，专利授权号：ZL202110646664.5，中国，发明专利, 2021.

[7]申胜男，刘胜，李辉，沈威，彭庆，严晗.一种n型磷掺杂金刚石薄膜中去除氢杂质的仿真方法，专利授权号：ZL201810180381.4，中国，发明专利, 2018.

[8]刘胜，申胜男，李辉，沈威，彭庆，严晗.一种n型磷掺杂金刚石薄膜制备过程中去除氢杂质的方法与装置，专利授权号：ZL201810180384.8，中国，发明专利, 2018.

[9]申胜男，李辉，张磊，沈威.金属3D打印中逐层可选择性双模激光清洗方法及清洗装置，专利授权号：ZL201710898857.3，中国，发明专利, 2017.

（1）主持项目信息：

主持1项国家自然科学基金-青年科学基金、1项湖北省自然科学基金-青年科学基金

（2）参与项目信息：

[1]MEMS传感器芯片先进封装测试平台（总经费1.25亿，国拨经费5000万），国家重点研发计划，2022-2025，参与，核心成员.

[2]薄膜生长缺陷跨时空尺度原位/实时监测与调控实验装置（6500万），国家自然科学基金委重大科研仪器研制项目，2018-2022，参与，核心成员.

[3]n型掺杂金刚石半导体单晶材料制备及关键技术研究（100万），广东省基础与应用基础研究重点项目，2020-2023，参与，核心成员.

[4]高性能n型磷掺杂金刚石薄膜的制备研究（50万），深圳市协同创新计划国际合作研究项目，2019-2020，参与，核心成员.